On Increasing of Integration Rate of Elements of a Current Source Circuit

Document Type : Full Length Article


Nizhny Novgorod State University, 23 Gagarin Avenue, Nizhny Novgorod, 603950, Russia


In this paper we introduce an approach to increase integration rate of elements of a current source circuit. Framework the approach we consider a hetero-structure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.