In this paper we introduce an approach to increase integration rate of elements of a current source circuit. Framework the approach we consider a hetero-structure with special configuration. Several specific areas of the heterostructure should be doped by diffusion or ion implantation. Annealing of dopant and/or radiation defects should be optimized.
Pankratov, E. (2021). On Increasing of Integration Rate of Elements of a Current Source Circuit. International Journal of Mathematical Modelling & Computations, 11(1 (WINTER)), 73-95. doi: 10.30495/ijm2c.2021.684820
MLA
Evgeny L. Pankratov. "On Increasing of Integration Rate of Elements of a Current Source Circuit". International Journal of Mathematical Modelling & Computations, 11, 1 (WINTER), 2021, 73-95. doi: 10.30495/ijm2c.2021.684820
HARVARD
Pankratov, E. (2021). 'On Increasing of Integration Rate of Elements of a Current Source Circuit', International Journal of Mathematical Modelling & Computations, 11(1 (WINTER)), pp. 73-95. doi: 10.30495/ijm2c.2021.684820
VANCOUVER
Pankratov, E. On Increasing of Integration Rate of Elements of a Current Source Circuit. International Journal of Mathematical Modelling & Computations, 2021; 11(1 (WINTER)): 73-95. doi: 10.30495/ijm2c.2021.684820
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